Question

Assuming that the NewFET is biased into its active region, derive expressions for the small-signal-model parameters gm and ro in terms of the large-signal model parameters K and VT and the bias voltages VGS and VDS.

Transconductance gm =

Answer 1

K*VDS^2

Answer 2

i have ro as this but it doesnt accept it\[1/(2*K*VDS*(Vgs-VT))\]

Answer 3

1/(2*K*VDS*(VGS-VT ))

Answer 4

copy it and reply if correct or not.

Answer 5

can you tell how you got ro???