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MIT 6.002 Circuits and Electronics, Spring 2007 11 Online
OpenStudy (anonymous):

Assuming that the NewFET is biased into its active region, derive expressions for the small-signal-model parameters gm and ro in terms of the large-signal model parameters K and VT and the bias voltages VGS and VDS. Transconductance gm =

OpenStudy (anonymous):

K*VDS^2

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