Question

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Answer 1

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Answer 2

@nurali We assume an "ancient" 1μm technology satisfying the static discipline:

VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V

The gate-source capacitance CGS=3.5fF and VT=1.0V.

RON=1900.0Ω, ROFF=110.0MΩ and RPU=12.0kΩ.
Now, suppose DIN is high, the drain of Q1 is low, and the gate of Q2 is at VOH. A STORE pulse comes in and turns on Q3. How long must the STORE pulse be on, in picoseconds, to discharge the gate capacitance of Q2 to VIL?