The circuit parameters have the following values: VS=5V and R=2kΩ, and the ExpFET parameters are: K=1mA, VT=1V and VN=1V. Given that vIN=0.5V, what is the value of vOUT in Volts? Given that vIN=2V, what is the value of vOUT in Volts? What is the value of vIN in Volts when vOUT drops to VS2? Now you replace the ExpFET with a MOSFET with parameters K=1mAV2, and VT=1V. Assuming the MOSFET is operating in the saturation region, what is the value of vIN in volts when vOUT drops to VS2? (Recall that for a MOSFET in saturation: iD=K2(VGS−VT)2
Again, the circuit parameters are: VS=5V and R=2kΩ, and the ExpFET parameters are K=1mA, VT=1V and VN=1V. Given that VIN=2V, what is the small-signal gain (voutvin) of this circuit? Now you replace the ExpFET with a MOSFET with parameters K=1mAV2 and VT=1V. Given that VIN=2V and assuming that the MOSFET is operating in saturation, what is the small-signal gain (voutvin) of this circuit?
Question 4 What is the expression for vC(t) during the time interval 0<t<T? What is the expression for vC(t) during the time interval t>T? What is the expression for iL(t) during the time interval t>T?
@jason10
question 4: part 1st : vC(t) = V*R2/(R1+R2)(1-e^(-(R1+R2)*t/(R1*R2*C))) not sure of this but my frnds r getting this!
what are the last 2
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