A single-junction Si solar cell is exposed to AM1.5 irradiation at T = 300 K and a open circuit voltage of V_{oc} = 700 mV is achieved. The total incident power on the cell is P_0 = 1000 W/m^{2} and the light current through the device is 400 A/m^{2}

Calculate the reverse bias saturation current $J_s$. Assume ideal diode behavior and take the Si band gap to be $E_g = 1.12 eV$. The answer should be in $A/cm^{2}$.

Any ideas on that one? Anything would help. :)

Question

A single-junction Si solar cell is exposed to AM1.5 irradiation at T = 300 K and a open circuit voltage of V_{oc} = 700 mV is achieved. The total incident power on the cell is P_0 = 1000 W/m^{2} and the light current through the device is 400 A/m^{2}

Calculate the reverse bias saturation current $J_s$. Assume ideal diode behavior and take the Si band gap to be $E_g = 1.12 eV$. The answer should be in $A/cm^{2}$.

Any ideas on that one? Anything would help. :)