A single-junction Si solar cell is exposed to AM1.5 irradiation at T = 300 K and a open circuit voltage of V_{oc} = 700 mV is achieved. The total incident power on the cell is P_0 = 1000 W/m^{2} and the light current through the device is 400 A/m^{2} Calculate the reverse bias saturation current Js. Assume ideal diode behavior and take the Si band gap to be Eg=1.12eV. The answer should be in A/cm2. Any ideas on that one? Anything would help. :)

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