The current density of an ideal p-n junction under illumination can be described by:
J(V)=Jph−J0(eqVkT−1)
where Jph is the photocurrent density, J0 the saturation current density, q the elementary charge, V the voltage, k the Boltzmann's constant, and T the temperature.
A crystalline silicon solar cell generates a photocurrent density of Jph=40mA/cm2 at T=300K. The saturation current density is J0=1.95∗10−10mA/cm2.
Assuming that the solar cell behaves as an ideal p-n junction, calculate the open-circuit voltage Voc (in V).

Question

The current density of an ideal p-n junction under illumination can be described by:
J(V)=Jph−J0(eqVkT−1)
where Jph is the photocurrent density, J0 the saturation current density, q the elementary charge, V the voltage, k the Boltzmann's constant, and T the temperature.
A crystalline silicon solar cell generates a photocurrent density of Jph=40mA/cm2 at T=300K. The saturation current density is J0=1.95∗10−10mA/cm2.
Assuming that the solar cell behaves as an ideal p-n junction, calculate the open-circuit voltage Voc (in V).