Question

Rth helpp....Vin =27V , R 1 =5Ω , R 2 =7Ω , R 3 =12Ω , A=6 and B=0.1 .

Answer 1

put Isc=0.25 in rth=vth/Isc

Answer 2

it's just missing this one to me too ..
Does anybody help me too ? Rth ... Vin=15V, R1=0.5Ω, R2=1.5Ω, R3=5Ω, A=2 and B=1.5.

Answer 3

cn u post formula of power in q2

Answer 4

Q2 is the same of HW3.. yeah.. for sure .. one minute !

Answer 5

EXPLANATION:

VS=5.0 VOH=4.5 VIH=4.0 VIL=1.5 VOL=1.0
The low noise margin is defined as VIL−VOL. For this problem, it is 0.5V. As an example, if an inverter outputs a valid voltage signal of 1.0V (VOL) to another inverter, then that signal can rise by 0.5V all the way to VIL, before it becomes an invalid logical 0 input to the second inverter.

The high noise margin is defined as VOH−VIH. For this problem, it is 0.5V. Again, if an inverter outputs a valid voltage signal of 4.5V(VOH) to another inverter, then that signal can fall by 0.5V, all the way to VIH before it becomes an invalid logical 1 input to the second inverter.

The width of the forbidden region is defined as VIH−VIL. For this problem, it is 2.5V. Valid inputs to our logic family are not allowed to fall between VIH and VIL.

When VGS for the MOSFET is below VT, the MOSFET behaves like an open circuit, and iDS=0. That means no voltage drops over RPUI and the output voltage of our inverter is VS, so this case is fine with out static discipline, since the output voltage is above VOH. For VGS≥VT, the MOSFET is on and behaves like a resistor with resistance RON with our model.

To find RPUI:

VOL=VS(RON)RON+RPUI
1=5(5000.0)(5000.0+RPUI)→RPUI=20000.0Ω
Similar to the inverter case, when either MOSFET is off, no current can flow through the pullup resistor because the MOSFETs and pullup resistor are in series. So VOUT for the NAND gate is simply VS when either MOSFET is off. When both MOSFETs are on, they behave like resistors with resistance RON. The two MOSFETs are in series, so we calculate:

To find RPUA:

VOL=VS(2RON)2RON+RPUA
1=5(10000.0)(10000.0+RPUA)→RPUA=40000.0Ω
When both MOSFETs are off, VOUT for the NOR gate is simply VS because no current can flow through either MOSFET or RPUO. When one MOSFET is on, VOUT is:

VS⋅(0.5)RON(0.5)RON+RPUO
because the MOSFETs are in parallel with each other. For the cases with one MOSFET on or both MOSFETs on, VOUT must be at least as small as VOL. For the case with one MOSFET on, RPUO must be at least 20000.0 Ω. For the case with both MOSFETs on, RPUO must be at least 10000.0 Ω. So for our NOR gate to satisfy the static discipline, RPUO must be at least 20000.0 Ω.

When the MOSFET in the inverter is off, no power is consumed because no current can flow as the MOSFET behaves like an open circuit. When it is on, VS must drop over RPUI and RON, so the power consumed is:
(VS)2RPUI+RON
Power consumed by inverter:

25V5000.0+20000.0Ω=0.001W
When either MOSFET is off, no current flows through the MOSFETs or RPUA, so there is no power consumed. When both MOSFETs are on, VS must drop over RPUA and 2RON because the MOSFETs are in series with each other. The power consumed in this case is:
(VS)2RPUA+2RON
Power consumed by NAND:

25V2⋅5000.0+40000.0Ω=0.0005W
When both MOSFETs are off, no curernt can flow, so no power is consumed. When one MOSFET is on, VS must drop over RPUO and RON, so the power consumed is:
(VS)2RPUO+RON
When both MOSFETs are on, VS must drop over RPUO and 12 RON because the MOSFETs are in parallel, so the power consumed is:
(VS)2RPUO+0.5(RON)
The maximum power is consumed by the NOR gate in the latter case:

25V(5000.0∥5000.0)+20000.0Ω=0.001111W

Answer 6

i forget the formula..

Answer 7

VIL−VOL

Answer 8

the first one

Answer 9

thnx dude

Answer 10

The high noise margin is defined as VOH−VIH

Answer 11

The width of the forbidden region is defined as VIH−VIL

Answer 12

can u plss solve this for me.. may b some calculation error
vT=2, Ron =18000

Answer 13

To find RPUI:

VOL=VS(RON)/RON+RPUI

Answer 14

Rth formula for Q6?

Answer 15

yeah.. I'll solve .. one minute .. I don't know yet Thunda.. I am really want to know too

Answer 16

I really want *

Answer 17

give me the values Vs etc etc ...

Answer 18

hey put Isc =0.75 in formula rth=vth/Isc

Answer 19

Vs=5v

Answer 20

what nurali?

Answer 21

Thanks a bunch!!

Answer 22

and what about Vol ? what's value yours ?

Answer 23

reply aditya

Answer 24

1 min

Answer 25

short circuit that circuit then calculate the current in that circuit.,
now that current I=Isc+B*vb

Answer 26

Vol=1V

Answer 27

try this value 72000 ... because Vol=Vs*Ron/Ron*Rput then we have
1=5*18000/18000+Rput to be 1= 1 the variable Rput is 72000

Answer 28

hey for power of nand the formula is : Vs^2/(Rpul+2*Ron)
but i got wrong answer

Answer 29

I'll help you.. 1 m

Answer 30

maybe your Rpua is not correct.. give me this value.. Rpua

Answer 31

hey i got.. thanx..:)

Answer 32

ooh no problem.. did you get entire Q2 ?

Answer 33

yup

Answer 34

great !!

Answer 35

can you help with Rth in Q6 ?

Answer 36

Isc=0,75.. is it this value that you said ?

Answer 37

yupp.. 0.75

Answer 38

what is your vth?

Answer 39

it's 3

Answer 40

vout= vth ... it's 3

Answer 41

rth=4

Answer 42

it's my last chance.. it's final check ..

Answer 43

is it really 4 ?

Answer 44

so wait.. 1st i recheck

Answer 45

thank you so much

Answer 46

look my values are Vin=15V, R1=0.5Ω, R2=1.5Ω, R3=5Ω, A=2 and B=1.5.

Answer 47

rth=4

Answer 48

get correct?

Answer 49

yeah... THANK YOU SO MUCH !

Answer 50

@kavi11: ur ans
1) 0.45
2)2.7
3)2.7
4)10.8

Answer 51

@akash97 : how do u get that ? can you post the formula ?

Answer 52

@xmark : I got using analysis
der is no kind of formula dar I use directly

Answer 53

Vin 27 v R1 5 ohm r2 = 7 Ohms R3 12 Ohms A=6 and B=0.1

QNO6 answers please please please ?

Answer 54

time is running out for my friend....

Answer 55

question 6
1)Vo* (R3-(B*R1*R3)+R1+R2+A*R2)/(R3-B*R1*R3)=VIN
2)i1=V0/(R3-B*R1*R3)
3)vo = vth
4)Rth=Vth/Isc
I=Isc+B*vb

Answer 56

http://openstudy.com/study#/updates/508b8bc0e4b077c2ef2e9093