Question

Assuming that the NewFET is biased into its active region, derive expressions for the small-signal-model parameters gm and ro in terms of the large-signal model parameters K and VT and the bias voltages VGS and VDS.

Transconductance gm =

Answer 1

@andrew.winney:( K *VDS*VDS)

Answer 2

The rest of H6P1: THE NEWFET DEVICE??

Answer 3

Have any know: Output resistance ro

Answer 4

1/(2*K*VDS*(VGS-VT ))