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Physics 17 Online
OpenStudy (anonymous):

A single-junction Si solar cell is exposed to AM1.5 irradiation at T = 300 K and a open circuit voltage of Voc =700mV is achieved. The total incident power on the cell is P =1000W/m2 and the light current through the device is 400A/m2. Calculate the reverse bias saturation current Js . Assume ideal diode behavior and take the Si band gap to be Eg =1.12eV . Your answer should be in A/cm2

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