OpenStudy (anonymous):

A single-junction Si solar cell is exposed to AM1.5 irradiation at T = 300 K and a open circuit voltage of Voc=700mV is achieved. The total incident power on the cell is P0=1000W/m2and the light current through the device is 400A/m2 Calculate the reverse bias saturation current Js. Assume ideal diode behavior and take the Si band gap to be Eg=1.12eV. Your answer should be in A/cm2

OpenStudy (anonymous):

@ehuman