The p-type region of a silicon p-n junction is doped with 1016 boron atoms per cubic centimeter, and the n-type region is doped with 1018 phosphorus atoms per cubic centimeter. Assume a step p-n junction and that all doping atoms are ionized. The intrinsic carrier concentration in silicon at 300K is 1.5∗1010cm−3. What are the electron and hole concentrations (in cm−3) in the p-type and n-type regions at thermal equilibrium? Hole concentration in p-type region (in 1016cm−3) :

Question

The p-type region of a silicon p-n junction is doped with 1016 boron atoms per cubic centimeter, and the n-type region is doped with 1018 phosphorus atoms per cubic centimeter. Assume a step p-n junction and that all doping atoms are ionized. The intrinsic carrier concentration in silicon at 300K is 1.5∗1010cm−3.  What are the electron and hole concentrations (in cm−3) in the p-type and n-type regions at thermal equilibrium?  Hole concentration in p-type region (in 1016cm−3) :

anonymous · Answer

$$n_i^2 = n_hn_e$$