H8P3: MEMORY
VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V
The gate-source capacitance CGS=3.5fF. VT=1.0V, RON=2100.0Ω, ROFF=110.0MΩ and RPU=10.0kΩ.
Last part answer please.
Now, suppose DIN is high, the drain of Q1 is low, and the gate of Q2 is at VOH. A STORE pulse comes in and turns on Q3. How long must the STORE pulse be on, in picoseconds, to discharge the gate capacitance of Q2 to VIL?

Question

H8P3: MEMORY 
VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V
The gate-source capacitance CGS=3.5fF.  VT=1.0V, RON=2100.0Ω, ROFF=110.0MΩ and RPU=10.0kΩ.
Last part answer please.
Now, suppose DIN is high, the drain of Q1 is low, and the gate of Q2 is at VOH. A STORE pulse comes in and turns on Q3. How long must the STORE pulse be on, in picoseconds, to discharge the gate capacitance of Q2 to VIL?